Patent · US Expired

Method for making surfactant-templated, high-porosity thin films

US6270846A · kind A · utility

102Cited by
3References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 2, 2000
Grant dateAug 7, 2001
Priority date
Expiry dateMar 2, 2020

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24331
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

An evaporation-induced self-assembly method to prepare a surfactant-templated thin film by mixing a silica sol, a surfactant, and a hydrophobic polymer and then evaporating a portion of the solvent during coating onto a substrate and then heating to form a liquid-phase, thin film material with a porosity greater than approximately 50 percent. The high porosity thin films can have dielectric constants less than 2 to be suitable for applications requiring low-dielectric constants. An interstitial compound can be added to the mixture, with the interstitial compound either covalently bonded to the pores or physically entrapped within the porous structure. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.