Method for forming a bottom electrode of a storage capacitor
US6271085A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 18, 2001 |
| Grant date | Aug 7, 2001 |
| Priority date | — |
| Expiry date | Jan 18, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
The present invention provides a method of forming an electrode, comprising the steps of: forming a dummy electrode having an uneven side face; forming a template insulating film which completely buries the dummy electrode; removing the dummy electrode with leaving the template insulating film so as to form a hole in the template insulating film, wherein a shape of the uneven side face of the dummy electrode as removed is transferred to an inside wall of the hole; filling a metal film into the hole of the template insulating film, wherein the shape of the uneven inside wall of the hole is transferred to a side face of the metal film; and removing the template insulating film to form a metal electrode with an uneven side face.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.