Fabrication of defect free III-nitride materials
US6271104A · kind A · utility
21Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 1999 |
| Grant date | Aug 7, 2001 |
| Priority date | — |
| Expiry date | Aug 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The subject invention involves a method of preparing defect-free semiconductor material layers by growing a semiconductor material buffer layer on a substrate, masking with a dielectric film, and etching to open spaced seed windows. Another layer of a III-V or II-VI material is then grown in the longitudinal direction from the seed window, followed by lateral growth of the same material to form an epitaxial film and a structure which provides a defect free surface for further epitaxial layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.