High-frequency passband microelectronics package
US6271579A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2000 |
| Grant date | Aug 7, 2001 |
| Priority date | — |
| Expiry date | Oct 9, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-frequency passband microelectronic package suitable for housing a high-frequency (e.g.,GHz range) electronic device operating at frequencies within the passband is disclosed herein. The package includes a base, an RF circuit substrate attached to a surface of the base and having a cavity for receiving the electronic device, and transmission lines formed on a surface of the circuit substrate. Each transmission line includes a first conductive pad for attachment to a node of the electronic device, a second conductive pad for attachment by a conductive lead to a node external to the package, and a matching circuit electrically coupled between the pads. The matching circuit includes a non-straight conductive trace shaped to compensate for impedance discontinuities between the node of the electronic device and the node external to the package at the high-frequency passband. For example, the trace can be shaped to compensate for the impedance discontinuity caused by the lead. The shape of the trace is determined by an electromagnetic simulation computer program simulating the frequency response of the transmission line based upon predetermined parameters defining the electromagnet…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.