Gate drive circuit of voltage drive switching element
US6271709A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 1999 |
| Grant date | Aug 7, 2001 |
| Priority date | — |
| Expiry date | Dec 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/163
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A gate drive circuit of a voltage drive switching element, which is characterized by control of di/dt and dv/dt when an IGBT is switched by controlling increases in the switching time and loss of the IGBT, includes a drive means for amplifying a signal for controlling the switching operation of a voltage drive switching device including the IGBT, a means for detecting the gate voltage of the IGBT, a voltage decrease (increase) means for slowly decreasing (increasing) the output voltage when the drive means is turned on (off) in the course of time, and a voltage increase (decrease) means for slowly increasing (decreasing) the output voltage. By switching from the voltage decrease (increase) means to the voltage increase (decrease) means according to the detected value of the gate voltage of the IGBT, di/dt and dv/dt are controlled when the IGBT is turned on (off).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.