Method for production of multi-layered epitaxially grown crystal and apparatus therefor
US6273946A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 1993 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | May 5, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B19/064
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A used melt receptacle 40, a holder 60 for the alignment of crystalline substrates and a melt receptacle 20 are piled up in this order along a vertically extending central axis. A plurality of melt reservoirs 21a to 21d for different kinds of melts are disposed in the melt receptacle 20 concentrically about the central axis, while a plurality of used melt reservoirs are disposed in the used melt receptacle 40 in the same way. The supply of each melt from the corresponding melt reservoir 21a to 21d to the receiving cavity 63 of the holder 60 is changed by a cover 65, in which a melt supply hole 66 is formed, rotatable together with the holder 60. The melt used for crystal growth is discharged from the holder 60 to the used melt receptacle 40 through a cover 42 having used melt dropping holes 43a to 43d. Since the melt fills the receiving cavity 63 while partially remaining in the corresponding melt reservoir 21a to 21d, neither oxide films nor microcrystals are introduced into the receiving cavity 63. Hereby, a multi-layered crystal grows on the surface of each crystalline substrate without the harmful influence of the oxide films and the microcrystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.