Method of fabricating a silicon solar cell
US6274402A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 30, 1999 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Dec 30, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, by depositing and patterning a first metal layer on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing a first insulator layer of inorganic material on the first metal layer, by etching and patterning the first insulator layer in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, by depositing a second insulator layer of organic material on the first insulator layer, by etching and patterning the second insulator layer in such a way that the insulator layer has opened windows at the one of the p-doped regions and the n-doped regions, by curing the second insulator layer by heating at a predetermined temperature for a predetermined time, and depositing a second metal layer on the second insulator layer of organic material in such a way that the second metal layer comes…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.