Method for manufacturing semiconductor device
US6274487A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 7, 1999 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Jun 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes the steps of: forming an interlayer dielectric film on a silicon substrate having a diffusion layer formed in one-side surface thereof; forming at least one contact hole in the interlayer dielectric film; forming a first high melting-point metal film and a first high melting-point metal nitride film on the surface of the contact hole in this order as a barrier metal; thermal treatment for improvement of a barrier property of the first high-melting point metal nitride film; and forming a second high melting-point metal nitride film, a second high melting-point metal film, and an aluminum-containing wiring film to fill the contact hole in this order in the same atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.