Process and device for production of metallic coatings on semiconductor structures

US6274492A · kind A · utility

Assignees

• Technische Universitaet Dresden · DE
• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Wolfgang Klimes · Dresden, DE
• Christian Wenzel · Untergruppenbach, DE
• Norbert Urbansky · Dresden, DE
• Peter Siemroth · Dresden, DE
• Thomas Shuelke · Dresden, DE
• Bernd Schultrich · Dresden, DE

Key dates

• Filing date: Jan 3, 1999
• Grant date: Aug 14, 2001
• Expiry date: Jan 3, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The invention relates to a process and a device for metallization of semiconductor structures, with which areas of the surface can be connected to be electrically conductive using strip conductors in one or a plurality of planes, and contacts between the strip conductors of different planes. The process for producing metallic coatings on semiconductor structures by depositing from a vapor phase under vacuum, in trenches produced for the strip conductors and holes for strip conductor connection in the substrate material such as SiO.sub.2 or other inorganic and organic materials is characterized in that a known per se pulsed vacuum-arc evaporator is used, a barrier layer being deposited on the surface of the trenches and holes of the substrates using the plasma of the evaporator and/or the trenches and holes being filled with low-impedance strip conductor material from a further plasma of said type of evaporator. The invention describes a device for carrying out the process which can be used, along with the device, to metal-coat trenches and holes with a high aspect ratio without hollow spaces.