Spin-on dielectric formation process for use in manufacturing semiconductors
US6274515A · kind A · utility
8Cited by
18References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1993 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Mar 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A spin-on dielectric for use in manufacturing semiconductors is produced. The dielectric is a siloxane polymer wherein each silicon atom is bonded to a polarization reducing group, and to three oxygen atoms each of which is bonded to one other silicon atom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.