Thermoelectric semiconductor material, manufacture process therefor, and method of hot forging thermoelectric module using the same
US6274802A · kind A · utility
41Cited by
3References
56Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 15, 1999 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Mar 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/01
Abstract
A thermoelectric semiconductor material having sufficient strength and performance and high production yield. The thermoelectric semiconductor material is characterized in that a sintered powder material of a thermoelectric semiconductor having a rhombohedral structure (or hexagonal structure) is hot-forged and plastically deformed to direct either the crystals of the sintered powder structure or the subcrystals constructing the crystals in a crystal orientation having an excellent figure of merit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.