Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
US6274888A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2000 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Jan 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a thin film transistor including an insulating substrate, an island made of a polycrystalline semiconductor material and disposed on the insulating substrate, a conductive layer made of the polycrystalline semiconductor material and at least one of metals and metallic silicides and surrounding the island, a source region and a drain region spaced from the source region, the source region and the drain region being formed in said island, a gate electrode disposed on the island with an insulating film interposed between the island and the gate electrode, the gate facing a spacing between the source region and the drain region. The polycrystalline semiconductor material forming the island and the conductive layer are fabricated by initially annealing a first amorphous semiconductor material deposited on the insulating substrate with a crystallization-inducing layer made of the at least one of metals and metallic silicides and having a hole corresponding to the island, the crystallization-inducing layer being disposed on a surface of the amorphous semiconductor material on at least one of a substrate side thereof and a side thereof opposite from the substrate…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.