Ultrafast nanoscale field effect transistor
US6274916A · kind A · utility
17Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1999 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Nov 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N99/03
Abstract
A method and structure for a field effect transistor (FET) includes a source region, a drain region, a channel region extending between the source region and the drain region, a gate region, and a gate oxide region separating the gate region from other regions of the FET. The channel region is a Mott insulator. The gate oxide region is thicker than the channel region, and the gate oxide region includes a higher dielectric permittivity than the Mott insulator material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.