Integrated inductor device and method for fabricating the same
US6274920A · kind A · utility
45Cited by
4References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 24, 1999 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Nov 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/00
Abstract
A method for fabricating an inductor device includes the steps of forming a plurality of trenches in a substrate by selectively etching the substrate, implanting dopants into sidewalls and bottom portion of each trench, forming an oxide layer by oxidizing the trenches and the substrate and simultaneously forming a doped layer in the surroundings of the trenches by diffusing the dopants into the substrate, and forming a dielectric layer on a resultant structure to fill the entrance of the trenches, thereby forming air-gap layers inside the trenches, thereby reducing a parasitic capacitance and a magnetic coupling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.