Semiconductor amplifier circuit
US6275095A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1999 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Nov 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/45674
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor amplifier circuit comprises a semiconductor substrate of one conductivity type, a well region of the one conductivity type, formed in said semiconductor substrate, a well region defining region of the other conductivity type, including a side wall portion and a bottom portion defining the well region, a first transistor formed in the well region and a second transistor formed on a surface of another portion of the substrate other than a portion on which the well region is formed. When the first and second transistors are in operation, a potential of the substrate is set to a reference potential, a potential of the well region defining region is set equal to the potential of the substrate or set to a value at which a junction between the well region defining region and the substrate is reverse-biased and at least one of the electrodes of the first transistor is set to a potential at which a junction between the well region defining region and the well region is reverse-biased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.