Semiconductor laser device and method of producing the same
US6275515A · kind A · utility
0Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1999 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Jan 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32383
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device on a GaAs substrate and having an oscillation wavelength of 1.3 .mu.m or 1.55 .mu.m and a method of producing the laser device. The laser device has a BTlGaAs active layer that lattice matches with the GaAs substrate. To grow the BTlGaAs active layer, organometallic vapor phase deposition is employed with cyclopentadienyl thallium as the source of Tl.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.