Nonvolatile memory
US6277689A · kind A · utility
42Cited by
6References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 11, 1998 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | Jun 11, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/685
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory cell is formed in an embedded P-well without the necessity of including an overlaying control gate. As a result, normal logic process technology may be utilized to form the nonvolatile memory cell. Through the use of substrate hot electron injection and the formation of a lateral bipolar transistor whose emitter acts as a charge injector, programming efficiency is improved and the necessary programming voltages and currents can be reduced from the relatively high voltages and currents used in other devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.