Surface emitting laser using two wafer bonded mirrors
US6277696A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1996 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | Nov 15, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2063
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a vertical cavity surface emitting laser having high gain and high reflectivity in the desired wavelength range and good thermal and electrical conductivity. The laser structure is comprised of a first mirror region, a second mirror region, and an active region positioned between the first and second mirror regions. Unlike, prior VCSELs, the active region is fused to both the first mirror region and the second mirror region. This allows the laser designer to optimize laser performance for the desired wavelength range by allowing the choice of different materials for the first mirror region, the second mirror region, and the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.