Semiconductor device and method for fabricating the same
US6277718A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1998 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | Mar 25, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/91
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method for fabricating a semiconductor device comprises an insulation film forming step of forming an insulation film 12 on a semiconductor substrate 10, a semiconductor layer forming step of forming a semiconductor layer 14 on the insulation film 12, and an impurity implanting step of implanting an impurity containing hydrogen into the semiconductor layer 14, the method being characterized by further comprising a fluorine implanting step of implanting fluorine in at least the insulation film 12. The dangling bonds of the insulation film can be bonded with the fluorine, whereby the fluorine, which has higher bonding energy with respect to silicon of the insulation film than hydrogen, is never dissociated from the silicon of the insulation film in the following heat treatments, BT stress test, etc. Accordingly, an interface state density in the interface between the insulation film and the semiconductor substrate can be depressed low, and a fixed charge in the insulation film can be depressed small. The semiconductor device and the method for fabricating the same can be reliable. The fluorine ion dose is suitably set to thereby prevent the insulation film from thickening. The me…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.