Method for fabricating ferroelectric capacitor
US6277760A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1999 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | Jun 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for fabricating a ferroelectric capacitor, including the steps of (1) foxing an etch stopper formed of any one of TiO.sub.2 and RuO.sub.2 a lower electrode, a ferroelectric layer, an upper electrode, and an etch mask layer formed of any one of Ti, Ru and Cr in succession on a substrate, (2) patterning the etch mask layer to a required form, (3) using the etch mask layer as a mask in etching the upper electrode, the ferroelectric layer, and the lower electrode at a time, to expose the etch stopper, and (4) removing the etch stopper and the etch mask layer, whereby allowing a simple and easy fabrication of the capacitor regardless of presence of steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.