Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor
US6278127A · kind A · utility
68Cited by
13References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 1995 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | May 15, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/655
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed are organic thin film transistors that can be either n-channel or p-channel transistors, depending on biasing conditions. Such transistors are expected to find wide use in complementary circuits. A specific embodiment of the inventive transistor comprises a 15 nm thick layer of .alpha.-6T with a 40 nm thick layer of C.sub.60 thereon. The latter was protected against degradation by the ambient by means of an appropriate electrically inert layer, specifically by a 40 nm .alpha.-6T layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.