Pixel TFT and driver TFT having different gate insulation width
US6278131A · kind A · utility
194Cited by
18References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2000 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | Jan 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6733
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device having high reliability, in which TFTs with appropriate structures for the circuit functions are arranged, is provided. Gate insulating films (115) and (116) of a driver TFT are designed thinner than a gate insulating film (117) of a pixel TFT in a semiconductor device having a driver circuit and a pixel section on the same substrate. In addition, the gate insulating films (115) and (116) of the driver TFT and a dielectric (118) of a storage capacitor are formed at the same time, so that the dielectric (118) may be extremely thin, and a large capacity can be secured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.