Silicon-based functional matrix substrate and optical integrated oxide device
US6278138A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 31, 1999 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | Aug 31, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical integrated oxide device uses a silicon-based functional matrix substrate on which both an oxide device and a semiconductor light emitting device can be commonly integrated with an optimum structure and a high density. A single-crystal Si substrate has formed on its surface a first region where a cleaned surface of the single-crystal Si substrate itself appears, and a second region in which a CeO.sub.2 thin film is preferentially (100)-oriented or epitaxially grown on the single-crystal Si substrate. A semiconductor laser is integrated in the first region by epitaxial growth or atomic layer bonding, and an optical modulation device or optical detection device made of oxides are formed in the second region, to make up an optical integrated oxide device. A MgAl.sub.2 O.sub.4 thin film may be used instead of CeO.sub.2 thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.