Integrated circuit insulator and structure using low dielectric insulator material including HSQ and fluorinated oxide
US6278174A · kind A · utility
47Cited by
11References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 25, 1997 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | Apr 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An intermetal level dielectric with two different low dielectric constant insulators: one for gap filling (140) within a metal level and the other (150) for between metal levels. Preferred embodiments include HSQ (140) as the gap filling low dielectric constant insulator and fluorinated silicon oxide (150) as the between metal level low dielectric constant insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.