Complementary and exchange mask design methodology for optical proximity correction in microlithography
US6280887A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 2, 2000 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Mar 2, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and structure for performing optical proximity correction in a photolithographic mask to prevent rounding of corners and line end foreshortening of a shape on the photolithographic mask comprises changing a transparency of the photolithographic mask by adding serifs and holes along each edge of the shape intersecting a comer of the shape to establish complementary symmetry along each edge of the shape, changing a transparency of quadrants around each comer of the shape to form mirror image diagonal quadrants centered on corners of the shape, reducing the size of serifs and holes by cutting out unnecessary parts to make the serifs and holes less likely to be printed and exchanging part of the serifs and holes around a comer to make the serifs and holes not printable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.