Manufacturing method for nitride III-V compound semiconductor device using bonding
US6281032A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1999 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Apr 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0264
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor device manufacturing method capable of manufacturing semiconductor lasers, light emitting diodes or electron transport devices using nitride III-V compound semiconductors with a high productivity, a GaN semiconductor laser wafer is prepared in which a plurality of semiconductor lasers are formed on an AlGaInN semiconductor layer on a c-face sapphire substrate and separated from each other by grooves deep enough to reach the c-face sapphire substrate, and a p-side electrode and an n-side electrode are formed in each semiconductor laser. The GaN semiconductor laser wafer is bonded to a photo-diode built-in Si wafer having formed a photo diode for monitoring light outputs and solder electrodes in each pellet by positioning the p-side electrode and the n-side electrode in alignment with the solder electrodes, respectively. After that, by lapping the c-face sapphire substrate from its bottom surface deep enough to reach the grooves or by dicing the c-face sapphire substrate from its bottom surface, the semiconductor lasers on the photo-diode built-in Si wafer are separated from each other. After that, the photo-diode built-in Si wafer is divided by dicing into discret…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.