Method of fabricating semiconductor device capable of providing MOSFET which is improved in a threshold voltage thereof
US6281094A · kind A · utility
3Cited by
10References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 1998 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | May 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of fabricating a semiconductor device by the use of a semiconductor substrate (1), boron ions (4) are implanted into the semiconductor substrate from a trench (3) which is formed to the semiconductor substrate. The trench is defined by a plurality of side surfaces and a bottom surface extending between the side surfaces. The boron ions are implanted through all of the side surfaces and the bottom surface. It is preferable that isolating material is filled into the trench to produce a trench isolation extending over a p-well (7) and a n-well (8).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.