Flash memory device with program status detection circuitry and the method thereof
US6282121A · kind A · utility
62Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2000 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Sep 6, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3454
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device includes a program state detection circuit for checking a state of programmed memory cells. The program state detection circuit checks program pass/fail using data transmitted through a column selection circuit, according to a column address having redundancy information. Therefore, it is possible to overcome the problem that the memory device is regarded as a fail device owing to a defective column.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.