Method for preparing high-purity ruthenium sputtering target and high-purity ruthenium sputtering target
US6284013A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2000 |
| Grant date | Sep 4, 2001 |
| Priority date | — |
| Expiry date | Mar 8, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P10/20
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
There is provided a high-purity ruthenium sputtering target with a low impurity content, in particular producing extremely few particles, which is suitable for applications such as the formation of semiconductor thin films. The high-purity ruthenium sputtering target is manufactured by feeding crude ruthenium powder into a sodium hydroxide solution; blowing an ozone-containing gas while or after blowing chlorine gas into the solution to form ruthenium tetroxide; absorbing the ruthenium tetroxide in a hydrochloric acid solution or a mixed solution of hydrochloric acid and ammonium chloride, and evaporating the solution to dryness; sintering the resultant ruthenium salt in a hydrogen atmosphere to form high-purity ruthenium powder; and hot-pressing the ruthenium powder into a sputtering target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.