Process for growing a silicon single crystal
US6284041A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1999 |
| Grant date | Sep 4, 2001 |
| Priority date | — |
| Expiry date | Aug 18, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for growing a single crystal in which variation in a dopant concentration in a melt contained in a crucible can be reduced and a single crystal having small variation in specific resistance can be produced. The process is the Czhohralski growth of a silicon single crystal including the steps: melting a crystal raw material in a crucible; bringing into contact a seed crystal to a melt contained in the crucible to thereby stabilize the surface temperature of the melt that is called "the seed crystal contact technique;" and adding a dopant into the crucible after carrying out the seed crystal contact technique. Furthermore, in the process, a dopant may be added while the seed crystal contact technique is stopped, and the seed crystal contact technique may be carried out again. Alternatively, a dopant may be added while the seed crystal contact technique is carried out.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.