Mask for manufacturing semiconductor device and method of manufacture thereof
US6284414A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 30, 2000 |
| Grant date | Sep 4, 2001 |
| Priority date | — |
| Expiry date | May 30, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/948
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a microminiaturization technique to achieve the miniaturization and higher integration of IC chip and to the improvement of a mask used in its manufacturing process. In other words, the phases of lights transmitted through the mask is controlled within one mask pattern. Specifically, a transparent film is formed in such a manner that is covers a mask pattern along a pattern formed by magnifying or demagnifying the mask pattern or otherwise a groove is formed in a mask substrate. A phase difference of 180.degree. is generated between the lights transmitted through the mask substrate and the transparent film or the groove, causing interference with each light to offset each other. Therefore, the pattern transferred onto a wafer has an improved resolution, being used in the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.