Method for manufacturing semiconductor device with stagnated process gas
US6284632A · kind A · utility
0Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1999 |
| Grant date | Sep 4, 2001 |
| Priority date | — |
| Expiry date | Oct 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/223
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to the present invention, a process of the present invention is performed with stagnated process gas in a chamber. The process comprises the steps of supplying process gas into a chamber, blocking process gas entry and exit from the chamber so as to stagnate the supplied gas therein, and performing the process. As a result, a process time can be significantly reduced, thereby maximizing yield and reducing the substantial amount of the process gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.