Cleaning and etching compositions
US6284721A · kind A · utility
Inventor
Key dates
| Filing date | Jul 21, 1999 |
| Grant date | Sep 4, 2001 |
| Priority date | — |
| Expiry date | Jul 21, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A cleaning and etching composition for cleaning and etching substrates comprising quartz, glass, silicon oxide or silicon as a main constituent is disclosed. A cleaning composition for cleaning substrates having a silicon oxide layer comprises: a fluoride which decomposes and releases fluoride ion in aqueous solution during cleaning and etching processes for reacting with silicon; and a persulfate which decomposes and releases hydrogen peroxide in the aqueous solution for increasing the oxidation effect of the fluoride. Display device substrates having silicon oxide layer and LCD glass substrates can be cleaned without imparting damages, as a result, a safe cleaning process can be implemented. A cleaning composition for cleaning substrates having a silicon layer comprises a fluoride, an inorganic acid and/or nitric acid. The above cleaning compositions can also be suitably utilized as an etchant for etching silicon and silicon oxide layers. The cleaning and etching composition of the present invention provides an is effective control of etching rates, thus the factors related to the etching process can be flexibly adjusted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.