Two-dimensional resonant tunneling diode memory system
US6285582A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 20, 2000 |
| Grant date | Sep 4, 2001 |
| Priority date | — |
| Expiry date | Mar 20, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5614
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A two-dimensional memory comprises a matrix of multi-valued resonant tunneling diodes (RTD). Each memory cell has two series RTDs with hysteretic folding V-I characteristics. The memory state is determined by the node voltage between the two RTDs and the series current. Each memory cell has two terminals connected to two bit lines through word line switches. The two bit lines are fed with two sets of multi-valued data and are written into the cell by two consecutive pulses to set the operating point. The two sets of multi-valued data are converted by two D/A converters from two sub-words of the binary digital word. The memory state is read by the sensing the voltages at the two terminals, or voltage at one terminal and the current through the other terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.