Semiconductor laser
US6285695A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 1999 |
| Grant date | Sep 4, 2001 |
| Priority date | — |
| Expiry date | Feb 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3406
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes a first clad layer having one of p-type conductivity and n-type conductivity, a first optical waveguide layer, a first barrier layer of GaAs.sub.1-y2 P.sub.y2, a quantum-well active layer of In.sub.x3 Ga.sub.1-x3 As.sub.1-y3 P.sub.y3, a second barrier layer of GaAs.sub.1-y2 P.sub.y2, a second optical waveguide layer and a second clad layer having the of p-type conductivity and n-type conductivity formed in this order on a GaAs substrate. Each of the first and second clad layers is of a composition which matches with the GaAs substrate in lattice. Each of the first and second optical waveguide layers is of a InGaAsP composition which matches with the GaAs substrate in lattice. Each of the first and second barrier layers is 10 to 30 nm in thickness and is of a composition which has tensile strain relative to the GaAs substrate, the product of the tensile strain and the thickness of each of the first and second barrier layers being 5 to 20% nm. The quantum-well active layer is 6 to 10 nm in thickness and is of a composition which has compressive strain of not smaller than 1.0% relative to the GaAs substrate. The sum of the product of the tensile strain a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.