Plasma process device
US6286454A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 30, 2000 |
| Grant date | Sep 11, 2001 |
| Priority date | — |
| Expiry date | May 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3244
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding device, a shower plate and a reaction gas supply passage. The microwave guiding device guides a microwave into the processing chamber. The shower plate has a gas inlet hole to supply to the processing chamber a reaction gas attaining a plasma state by the microwave, and a lower surface facing the processing chamber and an upper surface positioned on the opposite side of the lower surface. The reaction gas supply passage is a positioned on the upper surface of the shower plate and supplies the reaction gas to the gas inlet hole. A wall surface of the reaction gas supply passage includes an upper surface of the shower plate and a conductor wall surface opposing the upper surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.