Recessed bonding of target for RF diode sputtering
US6287437A · kind A · utility
25Cited by
11References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 2000 |
| Grant date | Sep 11, 2001 |
| Priority date | — |
| Expiry date | May 5, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3407
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A recessed sputtering target assembly is provided with a bonding material disposed between a dielectric target and a backing plate. The bond line of the bonding material is recessed away from the edges of the target and backing plate, preferably by 1/4 inch. The sputtering target assembly may be used during high RF power processes to achieve high deposition rates without arcing of the bonding material or contamination of the sputtering chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.