Semiconductor device with low parasitic capacitance

US6287881A · kind A · utility

Assignee

• Mitel Semiconductor AB · CA

Inventors

• Jan Jonsson · Järfälla, SE
• Mikael Wickstrom · Järfälla, SE

Key dates

• Filing date: Oct 25, 1999
• Grant date: Sep 11, 2001
• Expiry date: Oct 25, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/2063
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method of fabricating a semiconductor device having active components grown on a substrate, involves providing a semiconductor substrate on which the active components are grown, and doping the semiconductor substrate to render it non conductive and thereby reduce parasitic capacitance between active components thereon. The components typically comprise a VCSEL and monitor. The doped substrate reduces parasitic capacitance.