Diamond thin film or the like, method for forming and modifying the thin film, and method for processing the thin film
US6287889A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2000 |
| Grant date | Sep 11, 2001 |
| Priority date | — |
| Expiry date | Jan 26, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12576
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An improved gas phase synthesized diamond, CBN, BCN, or CN thin film having a modified region in which strain, defects, color and the like are reduced and/or eliminated. The thin film can be formed on a substrate or be a free-standing thin film from which the substrate has been removed. The thin film can be stably and reproducibly modified to have an oriented polycrystal structure or a single crystal structure. The thin film is modified by being subjected to and heated by microwave irradiation in a controlled atmosphere. The thin film has a modified region in which a line width of the diamond spectrum evaluated by Raman spectroscopy of 0.1 microns or greater is substantially constant along a film thickness direction of the thin film, and the line width of the modified region is 85% or less of a maximum line width of the residual portion of the film thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.