Electrode for generating a plasma and a plasma processing apparatus using the same
US6287981A · kind A · utility
5Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 2, 1999 |
| Grant date | Sep 11, 2001 |
| Priority date | — |
| Expiry date | Sep 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32541
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a plasma generating electrode containing at least one protrusion for improving the plasma density and uniformity. The apparatus may be a plasma dry etching apparatus, a plasma enhanced CVD deposition apparatus or a sputtering apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.