Semiconductor device
US6288429A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1999 |
| Grant date | Sep 11, 2001 |
| Priority date | — |
| Expiry date | Jul 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
Abstract
A semiconductor device which materializes dynamic threshold operation, on the assumption of the application of a bulk semiconductor substrate. The semiconductor substrate has a first conductivity type well region (11), a source region (12) and a drain region (13) of second conductivity type are made in the vicinity of the surface of the first conductivity type of well region (11), a channel region (14) is provided between these regions (12 and 13), a gate insulating film (15) and a gate electrode (16) are stacked in order on the channel region (14), and the gate electrode (16) is connected to the well region (11) through the contact hole (not shown in the figure) of the gate insulating film (15). In this transistor, as compared with a conventional SOI substrate, the resistance of the well region (11) can be lowered to about one-tenth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.