Plasma enhanced chemical vapor deposition system
US6289842A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 18, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Jun 18, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32522
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A Metal Organic Chemical Vapor Deposition (MOCVD) system particularly suitable for use at low deposition pressures and high or low temperatures. The system includes a reactor chamber having a reactant gas distribution unit (showerhead) which may be height adjustable having a temperature control chamber, for controlling the temperature of the reactants, a chamber for providing a uniform flow of carrier gas and a gas distribution chamber which includes baffling which can preclude gas phase mixing of the reactants. The gas distribution unit also includes an integral plasma generating electrode system for providing plasma enhanced deposition with controlled distribution of reactants. Also located in the reactor chamber is a temperature control unit for heating and/or cooling the wafers and a non-levitating rotating wafer carrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.