Polishing method for silicon wafers which uses a polishing compound which reduces stains
US6290580A · kind A · utility
12Cited by
24References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Sep 7, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The present invention provides a polishing compound which does not make stain grow on the surface of work-piece comprising, the dispersion containing 1-30 wt. % of metal oxide particles having 8-500 nm average diameter, acid or alkali and salt, and whose pH is 7-12. Desirably said polishing compound is the compound in which water soluble organic solvent is contained. Further, present invention provides edge polishing method and surface polishing method by use of said polishing compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.