Method and apparatus for fabricating single crystal
US6290773A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Jun 3, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1016
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention relates to fabrication of a single crystal of a compound semiconductor according to the vertical Bridgman method which improves a recess in the interface between solid and melt and can obtain a stable yield of single crystal growth characterized in that a part for discharging the heat of a crucible to the outside in the radial direction is formed at least in a part in the circumferential direction of a heater part for controlling the interface between solid and melt in a heater which surrounds the crucible and a semiconductor melt is gradually solidified from a lower part to an upper part in the crucible while maintaining the interface between solid and melt in a saddle shape, thereby growing a single crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.