Sputtering method for forming dielectric films
US6290822A · kind A · utility
40Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Dec 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a dielectric film having a desired composition comprising sputtering a dielectric material onto a substrate to produce an intermediary film, the intermediary film incorporating one or more elements in addition to those elements included in the desired composition of the dielectric film; and removing the one or more additional elements from the intermediary film to produce the dielectric film having the desired composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.