Method for making MOS transistors
US6291299A · kind A · utility
2Cited by
3References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 14, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Oct 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
Abstract
An improved method of forming an MOS transistor, which includes forming a polysilicon layer on a silicon dioxide layer, which is formed on a substrate. After etching the polysilicon and silicon dioxide layers to define a gate electrode and a gate oxide, dopants are implanted into the substrate. Following that implantation step, the exposed portion of the gate oxide is cleaned and sealed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.