Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
US6291319A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Dec 17, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, nitrogen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN.sub.2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSi[N.sub.1- O.sub.x ].sub.2, where M is a metal and X is 0.ltoreq.X<1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.