Method of fabricating a self-aligned contact opening
US6291355A · kind A · utility
11Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Sep 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabrication method for a self-aligned contact opening involves using polysilicon to protect a cap layer above a conductive line or even a corner of a spacer on a sidewall of the conductive line. A silicon oxide layer is then etched using a conventional silicon oxide etching recipe to form a self-aligned contact opening. This conventional silicon oxide etching recipe not only has a higher etching selectivity for silicon oxide to silicon nitride, but also yields a higher etching selectivity ratio for silicon oxide to polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.