Method of operating a programmable, non-volatile memory device
US6291836A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 1997 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | May 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to an erasable non-volatile memory in which a diode is formed at each point of intersection between the x-selection lines (K.sub.i) and y-selection lines (R.sub.j), of which diode the anode and cathode are conductively connected to the x- and y-selection lines. The diodes are formed in hydrogenated amorphous silicon or silicon compounds such as amorphous S.sub.i-x Ge.sub.x. Writing takes place by means of a current pulse through selected diodes. The current in the forward direction becomes much lower, for example a few hundred times lower, than in diodes which are not selected, probably owing to degradation in the semiconductor material. The diodes may be returned to their original state again (i.e. be erased) through heating, for example at a temperature of 200.degree. C. during 100 minutes. Preferably, the diodes are formed by Schottky diodes because the characteristic in the reverse direction does not (substantially) change in this type of diode. The Schottky diodes may be formed in the transitional region between the amorphous intrinsic semiconductor material (6) and the selection lines (K.sub.i).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.