Gas sensing diode comprising SiC
US6291838A · kind A · utility
8Cited by
14References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 15, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Nov 15, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N33/005
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A diode for sensing hydrogen and hydrocarbons and the process for manufacturing the diode are disclosed. The diode is a Schottky diode which has a palladium chrome contact on the C-face of an n-type 6H Silicon carbide epilayer. The epilayer is grown on the C-face of a 6H silicon carbide substrate. The diode is capable of measuring low concentrations of hydrogen and hydrocarbons at high temperatures, for example, 800.degree. C. The diode is both sensitive and stable at elevated temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.